Schottky Junctions in ReRAM: A Case Study on Metal/Nb-doped SrTiO3 with Christopher Broyles

The growing computational demands of artificial intelligence are placing increasing pressure on conventional computing architectures and the continued scaling of semiconductor technology, motivating the search for more energy-efficient hardware. Resistive random-access memory (ReRAM), which stores information through electrically induced changes in device resistance, has emerged as a promising technology for next-generation computing. Beyond conventional data storage, ReRAM devices can enable in-memory computing by performing computations directly within the memory, reducing data movement between memory and processing units. This capability also makes ReRAM a promising platform for neuromorphic computing, where electronic devices emulate the functions of biological neurons and synapses. In this talk, I will introduce ReRAM technology and discuss its potential roles in in-memory and neuromorphic computing, with a particular focus on interface-type memristors. From the perspective of semiconductor physics and charge transport, I will use metal/Nb-doped SrTiO3 devices as a model system to explore how interfacial defects, charge trapping, and Schottky barrier modulation give rise to resistive switching. Finally, I will discuss the current challenges and future opportunities for interface-engineered ReRAM devices in emerging applications. 

This lecture was made possible by the William C. Ferguson Fund.